US Patent 8067814 Semiconductor device and method of manufacturing the same

In the present invention, a first circuit pattern 3 composing a semiconductor element is formed on the front side of a substrate 1, a first insulating layer 2 is formed on the first circuit pattern 3, solder electrodes 5 for external connection are formed on the first insulating layer 2, a second insulating layer 6 is formed on the backside of the substrate 1, a second circuit pattern 7 is formed on the second insulating layer 6, through vias 8 are formed to connect the first circuit pattern 3 and the second circuit pattern 7, chip passive components 9 are placed on the second circuit pattern 7, and the backside of the substrate is integrally molded with epoxy resin 10 such that the epoxy resin 10 covers the chip passive components 9.