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US Patent 11878389 Structures formed using an additive manufacturing process for regenerating surface texture in situ

Patent 11878389 was granted and assigned to Applied Materials on January, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Applied Materials
Applied Materials
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Current Assignee
Applied Materials
Applied Materials
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118783890
Patent Inventor Names
Veera Raghava Reddy Kakireddy0
Daniel Redfield0
Rajeev Bajaj0
Puneet Narendra Jawali0
Date of Patent
January 23, 2024
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Patent Application Number
171721520
Date Filed
February 10, 2021
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Patent Citations
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US Patent 6860793 Window portion with an adjusted rate of wear
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US Patent 6860802 Polishing pads for chemical mechanical planarization
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US Patent 6866807 High-precision modeling filament
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US Patent 6869350 Polishing pads and methods relating thereto
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US Patent 6875096 Chemical mechanical polishing pad having holes and or grooves
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US Patent 6875097 Fixed abrasive CMP pad with built-in additives
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US Patent 6896593 Microporous polishing pads
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US Patent 6913517 Microporous polishing pads
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...
Patent Primary Examiner
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Joel D Crandall
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CPC Code
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B24B 37/26
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B33Y 80/00
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B23K 26/342
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B24B 37/245
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B24B 37/20
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B24B 37/22
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B24B 37/24
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B24D 15/023
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Patent abstract

Embodiments of the present disclosure generally relate to structures formed using an additive manufacturing process, and more particularly, to polishing pads, and methods for manufacturing polishing pads, which may be used in a chemical mechanical polishing (CMP) process. The structures described herein are formed from a plurality of printed layers. The structure comprises a first material domain having a first material composition and a plurality of second material domains having a second material composition different from the first material composition. The first material domain is configured to have a first rate of removal and the plurality of second material domains are configured to have a different second rate of removal when an equivalent force is applied to a top surface of the first material domain and the plurality of second material domains.

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