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US Patent 10367080 Method of forming a germanium oxynitride film
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Patent
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Date Filed
May 2, 2016
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Date of Patent
July 30, 2019
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Patent Application Number
15144506
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Patent Citations
US Patent 10032792 Semiconductor device and manufacturing method thereof
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US Patent 10043661 Method for protecting layer by forming hydrocarbon-based extremely thin film
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US Patent 10083836 Formation of boron-doped titanium metal films with high work function
US Patent 10087522 Deposition of metal borides
US Patent 10090316 3D stacked multilayer semiconductor memory using doped select transistor channel
US Patent 10087525 Variable gap hard stop design
US Patent 10103040 Apparatus and method for manufacturing a semiconductor device
US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
Patent Citations Received
US Patent 11053591 Multi-port gas injection system and reactor system including same
US Patent 11274369 Thin film deposition method
US Patent 11282698 Method of forming topology-controlled amorphous carbon polymer film
US Patent 11286562 Gas-phase chemical reactor and method of using same
US Patent 11286558 Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US Patent 11289326 Method for reforming amorphous carbon polymer film
US Patent D947913 Susceptor shaft
US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US Patent 10720331 Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
•••
Patent Inventor Names
Fu Tang
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Michael Eugene Givens
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Qi Xie
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Xiaoqiang Jiang
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Jan Willem Maes
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10367080
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Patent Primary Examiner
Duy T Nguyen
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