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US Patent 11286562 Gas-phase chemical reactor and method of using same

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Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11286562
Date of Patent
March 29, 2022
Patent Application Number
16004041
Date Filed
June 8, 2018
Patent Citations
‌
US Patent 10395917 Si precursors for deposition of SiN at low temperatures
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US Patent 10600637 Formation of SiOC thin films
‌
US Patent 10622196 Plasma processing apparatus
‌
US Patent 10648788 Substrate distance monitoring
‌
US Patent 10714335 Method of depositing thin film and method of manufacturing semiconductor device
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US Patent 10763139 Vacuum transfer module and substrate processing apparatus
‌
US Patent 11018003 Method of selective silicon germanium epitaxy at low temperatures
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US Patent 10032628 Source/drain performance through conformal solid state doping
...
Patent Citations Received
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US Patent D1005974 Gas distributor for semiconductor manufacturing apparatus
0
‌
US Patent 11587783 Si precursors for deposition of SiN at low temperatures
‌
US Patent 11784043 Formation of SiN thin films
Patent Primary Examiner
‌
Karla A Moore

A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.

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