Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshiya Suzuki
Shang Chen
Kunitoshi Namba
Viljami J. Pore
Dai Ishikawa
Ryoko Yamada
Date of Patent
October 10, 2023
Patent Application Number
17406919
Date Filed
August 19, 2021
Patent Citations
...
Patent Primary Examiner
Patent abstract
Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H
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