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US Patent 11923361 Semiconductor device with isolation structure

Patent 11923361 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
July 5, 2022
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Date of Patent
March 5, 2024
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17857740
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Patent Citations
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 10263100 Buffer regions for blocking unwanted diffusion in nanosheet transistors
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US Patent 10535733 Method of forming a nanosheet transistor
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US Patent 10573755 Nanosheet FET with box isolation on substrate
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US Patent 9209247 Self-aligned wrapped-around structure
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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•••
Patent Inventor Names
Shi-Ning Ju
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Chih-Hao Wang
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Kuo-Cheng Chiang
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Kuan-Lun Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11923361
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Patent Primary Examiner
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Jonathan Han
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CPC Code
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H01L 27/0924
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H01L 29/66772
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H01L 29/78654
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B82Y 10/00
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H01L 27/0886
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H01L 21/76224
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H01L 21/823431
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H01L 29/0847
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H01L 29/42392
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H01L 29/66545
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•••

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