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US Patent 10211308 NbMC layers
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Patent
Date Filed
October 21, 2015
Date of Patent
February 19, 2019
Patent Application Number
14919536
Patent Citations Received
US Patent 11004977 Method for depositing a group IV semiconductor and related semiconductor device structures
US Patent 11286562 Gas-phase chemical reactor and method of using same
US Patent 11286558 Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
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US Patent 11289326 Method for reforming amorphous carbon polymer film
US Patent D947913 Susceptor shaft
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US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
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US Patent 11230766 Substrate processing apparatus and method
US Patent 11232963 Substrate processing apparatus and method
US Patent 11233133 NbMC layers
0
•••
Patent Inventor Names
Timo Asikainen
0
Chiyu Zhu
0
Robert Brennan Milligan
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10211308
Patent Primary Examiner
Jamie C Niesz
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