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US Patent 11233133 NbMC layers

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
112331330
Patent Inventor Names
Timo Asikainen0
Chiyu Zhu0
Robert Brennan Milligan0
Date of Patent
January 25, 2022
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Patent Application Number
162403920
Date Filed
January 4, 2019
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Patent Citations
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US Patent 10269558 Method of forming a structure on a substrate
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US Patent 10297440 Method of manufacturing semiconductor device
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US Patent 10312055 Method of depositing film by PEALD using negative bias
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US Patent 10312129 Variable adjustment for precise matching of multiple chamber cavity housings
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US Patent 10319588 Method for depositing a metal chalcogenide on a substrate by cyclical deposition
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US Patent 10322384 Counter flow mixer for process chamber
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US Patent 10332963 Uniformity tuning of variable-height features formed in trenches
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US Patent 10032628 Source/drain performance through conformal solid state doping
0
...
Patent Primary Examiner
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Michael M Trinh
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Patent abstract

Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.

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