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MEARS Technologies
MEARS Technologies is a Waltham, Massachusetts-based semiconductor company.
Overview
Structured Data
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All edits
Edits on 7 Sep, 2023
"prospector:3164:3633378"
Katrina-Kay Pettitt
edited on 7 Sep, 2023
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Number of Employees (Ranges)
20 – 49
Number of Employees (Ranges)
10 – 19
Edits on 6 May, 2023
"Covert AngelList URL to Wellfound ID"
Golden AI
edited on 6 May, 2023
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+1
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Wellfound ID
mears-technologies
Edits on 24 Aug, 2022
Dhruv Sharma
edited on 24 Aug, 2022
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+8
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Date Incorporated
January 12, 2016
NAICS Code
81,299
Full Address
100 Winter St Ste 4700, Waltham, MA 02451
Location
Waltham, Massachusetts
Number of Employees (Ranges)
20 – 49
Number of Employees
3
Parent Organization
Atomera
Place of Incorporation
Delaware
Edits on 23 Jun, 2022
"Edit from table cell"
Ольга Дрокина
edited on 23 Jun, 2022
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Company Operating Status
Active
Edits on 10 Jun, 2022
"Entity importer update"
Golden AI
edited on 10 Jun, 2022
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+1
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Is a
Organization
Edits on 11 May, 2022
Tim D
edited on 11 May, 2022
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Crunchbase
https://www.crunchbase.com/organization/mears-technologies
Edits on 8 Apr, 2022
"Patent autocalculation"
Golden AI
edited on 8 Apr, 2022
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+1
properties)
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Patents assigned (count)
29
Edits on 14 Dec, 2021
"Remove inverse infobox"
Golden AI
edited on 14 Dec, 2021
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-27
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Patents
US Patent 7303948 Semiconductor device including MOSFET having band-engineered superlattice
US Patent 7432524 Integrated circuit comprising an active optical device having an energy band engineered superlattice
US Patent 7433729 Infrared biometric finger sensor including infrared antennas and associated methods
US Patent 7435988 Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
US Patent 7436026 Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
US Patent 7446002 Method for making a semiconductor device comprising a superlattice dielectric interface layer
US Patent 7446334 Electronic device comprising active optical devices with an energy band engineered superlattice
US Patent 7491587 Method for making a semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer
US Patent 7514328 Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween
US Patent 7517702 Method for making an electronic device including a poled superlattice having a net electrical dipole moment
US Patent 7531828 Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions
US Patent 7531829 Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
US Patent 7531850 Semiconductor device including a memory cell with a negative differential resistance (NDR) device
US Patent 7535041 Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
US Patent 7586116 Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
US Patent 7586165 Microelectromechanical systems (MEMS) device including a superlattice
US Patent 7598515 Semiconductor device including a strained superlattice and overlying stress layer and related methods
US Patent 7612366 Semiconductor device including a strained superlattice layer above a stress layer
US Patent 7625767 Methods of making spintronic devices with constrained spintronic dopant
US Patent 7659539 Semiconductor device including a floating gate memory cell with a superlattice channel
US Patent 7700447 Method for making a semiconductor device comprising a lattice matching layer
US Patent 7718996 Semiconductor device comprising a lattice matching layer
US Patent 7781827 Semiconductor device with a vertical MOSFET including a superlattice and related methods
US Patent 7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
US Patent 7863066 Method for making a multiple-wavelength opto-electronic device including a superlattice
US Patent 7880161 Multiple-wavelength opto-electronic device including a superlattice
US Patent 7928425 Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
Edits on 7 Dec, 2021
Golden AI
edited on 7 Dec, 2021
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+1
properties)
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Patents
US Patent 7928425 Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
Edits on 6 Dec, 2021
Golden AI
edited on 6 Dec, 2021
Edits made to:
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+1
properties)
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Patents
US Patent 7880161 Multiple-wavelength opto-electronic device including a superlattice
Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7863066 Method for making a multiple-wavelength opto-electronic device including a superlattice
Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
Edits on 5 Dec, 2021
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox
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+1
properties)
Infobox
Patents
US Patent 7781827 Semiconductor device with a vertical MOSFET including a superlattice and related methods
Edits on 4 Dec, 2021
Golden AI
edited on 4 Dec, 2021
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Infobox
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+1
properties)
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Patents
US Patent 7718996 Semiconductor device comprising a lattice matching layer
Golden AI
edited on 4 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7700447 Method for making a semiconductor device comprising a lattice matching layer
Edits on 3 Dec, 2021
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7659539 Semiconductor device including a floating gate memory cell with a superlattice channel
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7625767 Methods of making spintronic devices with constrained spintronic dopant
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7612366 Semiconductor device including a strained superlattice layer above a stress layer
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7598515 Semiconductor device including a strained superlattice and overlying stress layer and related methods
Golden AI
edited on 3 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patents
US Patent 7586165 Microelectromechanical systems (MEMS) device including a superlattice
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