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US Patent 7586165 Microelectromechanical systems (MEMS) device including a superlattice

Patent 7586165 was granted and assigned to MEARS Technologies on September, 2009 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
MEARS Technologies
MEARS Technologies
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7586165
Date of Patent
September 8, 2009
Patent Application Number
11421234
Date Filed
May 31, 2006
Patent Citations Received
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US Patent 12119380 Method for making semiconductor device including superlattice with oxygen and carbon monolayers
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US Patent 12014923 Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice
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US Patent 12020926 Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice
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0
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US Patent 11664427 Vertical semiconductor device with enhanced contact structure and associated methods
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US Patent 11664459 Method for making an inverted T channel field effect transistor (ITFET) including a superlattice
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US Patent 11682712 Method for making semiconductor device including superlattice with O18 enriched monolayers
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US Patent 11837634 Semiconductor device including superlattice with oxygen and carbon monolayers
0
...
Patent Primary Examiner
‌
Thinh T Nguyen
Patent abstract

A microelectromechanical system (MEMS) device may include a substrate and at least one movable member supported by the substrate. The at least one movable member may include a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

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