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US Patent 9679650 3D NAND memory Z-decoder

Patent 9679650 was granted and assigned to Micron Technology on June, 2017 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Micron Technology
Micron Technology
Date Filed
May 6, 2016
Date of Patent
June 13, 2017
Patent Applicant
Micron Technology
Micron Technology
Patent Application Number
15148408
Patent Citations Received
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US Patent 11862238 Multi-deck memory device including buffer circuitry under array
0
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US Patent 11943919 Microelectronic devices including two-dimensional materials, and related memory devices and electronic systems
0
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US Patent 11908948 Memory devices including indium-containing materials, and related electronic systems
0
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US Patent 12131782 3D memory device including shared select gate connections between memory blocks
0
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US Patent 12069872 Memory device and method of manufacturing memory device
0
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US Patent 11670370 3D memory device including shared select gate connections between memory blocks
0
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US Patent 11765916 Memory device and method of manufacturing memory device
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US Patent 11769538 Decode circuitry coupled to a memory array
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9679650
Patent Primary Examiner
‌
Tan T. Nguyen

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