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US Patent 11862238 Multi-deck memory device including buffer circuitry under array

Patent 11862238 was granted and assigned to Micron Technology on January, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Micron Technology
Micron Technology
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Current Assignee
Micron Technology
Micron Technology
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118622380
Patent Inventor Names
Tomoharu Tanaka0
Date of Patent
January 2, 2024
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Patent Application Number
179417990
Date Filed
September 9, 2022
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Patent Citations
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US Patent 8576629 Operating method of nonvolatile memory device
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US Patent 7554832 Passive element memory array incorporating reversible polarity word line and bit line decoders
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US Patent 7852676 Three dimensional stacked nonvolatile semiconductor memory
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US Patent 7859902 Three dimensional stacked nonvolatile semiconductor memory
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US Patent 7920408 Resistance change nonvolatile memory device
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US Patent 8098520 Storage device including a memory cell having multiple memory layers
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US Patent 10269429 Architecture for 3-D NAND memory
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US Patent 10354730 Multi-deck memory device with access line and data line segregation between decks and method of operation thereof
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...
Patent Citations Received
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US Patent 12062393 Nonvolatile semiconductor memory device with a plurality of memory blocks and a shared block decoder
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Patent Primary Examiner
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Khamdan N. Alrobaie
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CPC Code
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G06F 13/1673
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G11C 11/4096
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G11C 5/025
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G11C 11/4094
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G11C 16/16
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Patent abstract

Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

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