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US Patent 7969193 Differential sensing and TSV timing control scheme for 3D-IC

Patent 7969193 was granted and assigned to National Tsing Hua University on June, 2011 by the United States Patent and Trademark Office.

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Patent

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Current Assignee
National Tsing Hua University
National Tsing Hua University
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7969193
Date of Patent
June 28, 2011
Patent Application Number
12830469
Date Filed
July 6, 2010
Patent Citations Received
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US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
0
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US Patent 11694922 Multilevel semiconductor device and structure with oxide bonding
0
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US Patent 11694944 3D semiconductor device and structure with metal layers and a connective path
0
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US Patent 11711928 3D memory devices and structures with control circuits
0
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US Patent 11763864 3D memory semiconductor devices and structures with bit-line pillars
...
Patent Primary Examiner
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Jason M Crawford
Patent abstract

This disclosure uses a differential sensing and TSV timing control scheme for 3D-IC, which includes a first chip layer of the stacked device having a detecting circuits and a relative high ability driver horizontally coupled to the detecting circuits. A sensing circuit is coupled to the detecting circuits by a horizontal line, a first differential signal driver is coupled to the sensing circuit, horizontally. The Nth chip layer of the stacked device includes a Nth relative high ability driver and a Nth differential signal driver formed on the Nth chip layer. The Nth relative high ability driver is vertically coupled to the first relative high ability driver through one relative low loading TSV and (N−2) TSVs to act as dummy loadings. The TSV and (N−2) TSVs penetrate the stacked device from Nth chip layer to first chip layer. The TSV shares same configuration with the (N−2) TSVs. The Nth differential signal driver is vertically coupled to the first differential signal driver through a pair of TSVs and (N−2) pairs of TSVs, vertically. The pair of TSVs and the (N−2) TSVs penetrate the stacked device from the Nth chip layer to the first chip layer. Each of TSV is formed between a first and a second chip layers. Each of TSV is formed between any adjacent two chip layers of the stacked device.

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