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US Patent 7371660 Controlled cleaving process

Patent 7371660 was granted and assigned to Silicon Genesis on May, 2008 by the United States Patent and Trademark Office.

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Patent

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Current Assignee
Silicon Genesis
Silicon Genesis
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7371660
Date of Patent
May 13, 2008
Patent Application Number
11281042
Date Filed
November 16, 2005
Patent Citations Received
‌
US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12094892 3D micro display device and structure
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
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US Patent 11694922 Multilevel semiconductor device and structure with oxide bonding
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US Patent 11694944 3D semiconductor device and structure with metal layers and a connective path
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US Patent 11711928 3D memory devices and structures with control circuits
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US Patent 11763864 3D memory semiconductor devices and structures with bit-line pillars
...
Patent Primary Examiner
‌
Hsien-Ming Lee
Patent abstract

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

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