Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 12, 2006
Patent Application Number
09161774
Date Filed
September 29, 1998
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
