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US Patent 12119392 Semiconductor device and method

Patent 12119392 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
August 9, 2023
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Date of Patent
October 15, 2024
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Patent Application Number
18446905
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Patent Citations
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US Patent 11404554 Transistor gates and method of forming
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US Patent 10263100 Buffer regions for blocking unwanted diffusion in nanosheet transistors
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US Patent 11302793 Transistor gates and method of forming
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US Patent 7256142 Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
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US Patent 8216951 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
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US Patent 9209247 Self-aligned wrapped-around structure
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US Patent 9818872 Multi-gate device and method of fabrication thereof
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US Patent 9997519 Dual channel structures with multiple threshold voltages
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US Patent 10170378 Gate all-around semiconductor device and manufacturing method thereof
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Patent Inventor Names
Shih-Chieh Chang
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Shahaji B. More
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12119392
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Patent Primary Examiner
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William A Harriston
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CPC Code
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H01L 29/66795
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