US Patent 11404554 Transistor gates and method of forming

A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises: a first p-type work function metal; a barrier material over the first p-type work function metal; and a second p-type work function metal over the barrier material, the barrier material physically separating the first p-type work function metal from the second p-type work function metal.