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US Patent 11916073 Stacked complementary field effect transistors

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 3, 2021
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Date of Patent
February 27, 2024
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Patent Application Number
17392691
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Patent Citations
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US Patent 9659963 Contact formation to 3D monolithic stacked FinFETs
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US Patent 9837414 Stacked complementary FETs featuring vertically stacked horizontal nanowires
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US Patent 10192819 Integrated circuit structure incorporating stacked field effect transistors
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US Patent 10192867 Complementary FETs with wrap around contacts and method of forming same
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US Patent 10256158 Insulated epitaxial structures in nanosheet complementary field effect transistors
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US Patent 10483166 Vertically stacked transistors
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US Patent 7054136 Controlled ESR low inductance multilayer ceramic capacitor
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US Patent 8115093 Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
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US Patent 9330983 CMOS NFET and PFET comparable spacer width
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US Patent 9570550 Stacked nanowire semiconductor device
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•••
Patent Inventor Names
Ruilong Xie
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Julien Frougier
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Chanro Park
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Kangguo Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11916073
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Patent Primary Examiner
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Michael M Trinh
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CPC Code
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H01L 29/0665
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H01L 27/092
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H01L 27/0688
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H01L 21/823814
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H01L 21/8221
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H01L 21/823878
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H01L 21/823871
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H01L 29/41725
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H01L 29/7848
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H01L 29/66545
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•••

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