US Patent 10256158 Insulated epitaxial structures in nanosheet complementary field effect transistors

Integrated circuit structures include isolation elements extending into a substrate, and source/drain regions of a first transistor contacting the isolation elements. The isolation elements extend from the substrate to the source/drain regions of the first transistor. Isolation layers contact the source/drain regions of the first transistor, and source/drain regions of a second transistor also contact the isolation layers. Thus, the isolation layers are between the source/drain regions of the first transistor and the source/drain regions of the second transistor. Channel regions of the first transistor contact and extend between the source/drain regions of the first transistor, and channel regions of the second transistor contact and extend between the source/drain regions of the second transistor. A gate conductor surrounds sides of the channel region of the first transistor and the channel region of the second transistor.