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US Patent 11715779 Multi-channel devices and methods of manufacture

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
February 28, 2022
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Date of Patent
August 1, 2023
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Patent Application Number
17682604
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Patent Citations
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9209247 Self-aligned wrapped-around structure
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11715779
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Patent Primary Examiner
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Cheung Lee
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CPC Code
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H01L 21/02532
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H01L 21/823412
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H01L 21/823437
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H01L 21/823462
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H01L 21/823431
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H01L 27/088
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H01L 27/0886
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H01L 27/0924
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H01L 29/0673
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H01L 29/1037
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