US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same

Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: forming a first doped region having a first conductivity in a substrate; forming a second doped region having a second conductivity different from the first conductivity in the substrate, the second doped region disposed laterally adjacent to and spaced apart from the first doped region; and oxidizing a semiconductive layer disposed between the substrate and the second doped region to form an oxidized isolation layer.