Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Dechao Guo11
Ruqiang Bao11
Reinaldo Vega11
Lan Yu11
Junli Wang11
Heng Wu11
Adra Carr11
Date of Patent
March 29, 2022
Patent Application Number
16290611
Date Filed
March 1, 2019
Patent Citations
Patent Primary Examiner
Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device includes a nanosheet stack structure including a semiconductor channel layer and a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure. A trench formed in the source/drain region is filled with a metal-based material. The metal-based material filling the trench in the source/drain region mitigates the effect of source/drain material overfill on the contact resistance of the semiconductor device.
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