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US Patent 11289573 Contact resistance reduction in nanosheet device structure

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Contents

Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11289573
Patent Inventor Names
Dechao Guo11
Ruqiang Bao11
Reinaldo Vega11
Lan Yu11
Junli Wang11
Heng Wu11
Adra Carr11
Date of Patent
March 29, 2022
Patent Application Number
16290611
Date Filed
March 1, 2019
Patent Citations
‌
US Patent 10263100 Buffer regions for blocking unwanted diffusion in nanosheet transistors
‌
US Patent 10361269 Forming bottom isolation layer for nanosheet technology
‌
US Patent 10361131 Stacked field-effect transistors (FETs) with shared and non-shared gates
‌
US Patent 10522419 Stacked field-effect transistors (FETs) with shared and non-shared gates
7
‌
US Patent 10032867 Forming bottom isolation layer for nanosheet technology
‌
US Patent 10236217 Stacked field-effect transistors (FETs) with shared and non-shared gates
10
Patent Primary Examiner
‌
Latanya N Crawford Eason
CPC Code
‌
H01L 29/165
‌
H01L 27/0886
‌
H01L 21/823412
‌
H01L 21/823418
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H01L 21/823431
‌
H01L 21/823437
‌
H01L 21/823468
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H01L 29/6656
...

Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device includes a nanosheet stack structure including a semiconductor channel layer and a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure. A trench formed in the source/drain region is filled with a metal-based material. The metal-based material filling the trench in the source/drain region mitigates the effect of source/drain material overfill on the contact resistance of the semiconductor device.

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