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US Patent 11056344 Layer forming method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
August 30, 2017
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Date of Patent
July 6, 2021
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Patent Application Number
15691241
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Patent Citations
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US Patent 10395919 Method and apparatus for filling a gap
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US Patent 10529554 Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
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US Patent 10590531 Substrate processing apparatus, and method of manufacturing semiconductor device
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US Patent 10600637 Formation of SiOC thin films
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US Patent 10622196 Plasma processing apparatus
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US Patent 10648788 Substrate distance monitoring
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US Patent 10714335 Method of depositing thin film and method of manufacturing semiconductor device
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US Patent 10763139 Vacuum transfer module and substrate processing apparatus
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US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10014212 Selective deposition of metallic films
•••
Patent Citations Received
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US Patent 11621169 Method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
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Patent Inventor Names
Chiyu Zhu
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Kiran Shrestha
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Qi Xie
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11056344
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Patent Primary Examiner
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Hsin-Yi Hsieh
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