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US Patent 10374144 Dry plasma etch method to pattern MRAM stack

Patent 10374144 was granted and assigned to Lam Research on August, 2019 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Lam Research
Lam Research
Date Filed
September 28, 2017
Date of Patent
August 6, 2019
Patent Applicant
Lam Research
Lam Research
Patent Application Number
15719497
Patent Citations
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US Patent 10096487 Atomic layer etching of tungsten and other metals
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US Patent 10186426 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
Patent Citations Received
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US Patent 12080562 Atomic layer etch and ion beam etch patterning
4
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US Patent 11411176 Gradient protection layer in MTJ manufacturing
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US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
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US Patent 11856865 Gradient protection layer in MTJ manufacturing
8
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US Patent 10515816 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
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US Patent 10566212 Designer atomic layer etching
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US Patent 10566213 Atomic layer etching of tantalum
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US Patent 11239094 Designer atomic layer etching
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US Patent 10727073 Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
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US Patent 10749103 Dry plasma etch method to pattern MRAM stack
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10374144
Patent Primary Examiner
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Allan W. Olsen

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