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US Patent 10749103 Dry plasma etch method to pattern MRAM stack

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United States Patent and Trademark Office

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Patent Number

Date of Patent

August 18, 2020

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Patent Application Number

164491410

Date Filed

June 21, 2019

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Patent Citations

US Patent 10186426 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)

US Patent 10096487 Atomic layer etching of tungsten and other metals

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US Patent 10374144 Dry plasma etch method to pattern MRAM stack

Patent Citations Received

US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials

US Patent 10998187 Selective deposition with atomic layer etch reset

US Patent 11069535 Atomic layer etch of tungsten for enhanced tungsten deposition fill

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