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US Patent 10749103 Dry plasma etch method to pattern MRAM stack

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
0
Current Assignee
Lam Research
Lam Research
0
Date Filed
June 21, 2019
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Date of Patent
August 18, 2020
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Patent Applicant
Lam Research
Lam Research
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Patent Application Number
16449141
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Patent Citations
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US Patent 10186426 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
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US Patent 10096487 Atomic layer etching of tungsten and other metals
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US Patent 10374144 Dry plasma etch method to pattern MRAM stack
Patent Citations Received
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US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
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US Patent 10998187 Selective deposition with atomic layer etch reset
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US Patent 11069535 Atomic layer etch of tungsten for enhanced tungsten deposition fill
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10749103
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Patent Primary Examiner
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Allan W. Olsen
0

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