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US Patent 10374144 Dry plasma etch method to pattern MRAM stack

Patent 10374144 was granted and assigned to Lam Research on August, 2019 by the United States Patent and Trademark Office.

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Is a
Patent
Patent

Patent attributes

Patent Applicant
Lam Research
Lam Research
Current Assignee
Lam Research
Lam Research
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10374144
Date of Patent
August 6, 2019
Patent Application Number
15719497
Date Filed
September 28, 2017
Patent Citations
‌
US Patent 10096487 Atomic layer etching of tungsten and other metals
‌
US Patent 10186426 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
Patent Citations Received
‌
US Patent 12080562 Atomic layer etch and ion beam etch patterning
4
‌
US Patent 11411176 Gradient protection layer in MTJ manufacturing
‌
US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
‌
US Patent 11856865 Gradient protection layer in MTJ manufacturing
8
‌
US Patent 10515816 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
‌
US Patent 10566212 Designer atomic layer etching
‌
US Patent 10566213 Atomic layer etching of tantalum
‌
US Patent 11239094 Designer atomic layer etching
...
Patent Primary Examiner
‌
Allan W. Olsen
Patent abstract

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.

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