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US Patent 12080562 Atomic layer etch and ion beam etch patterning

Patent 12080562 was granted and assigned to Lam Research on September, 2024 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Patent Applicant
Lam Research
Lam Research
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Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
120805620
Patent Inventor Names
Wenbing Yang0
Girish Dixit0
Samantha Siamhwa Tan0
Tamal Mukherjee0
Yang Pan0
Date of Patent
September 3, 2024
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Patent Application Number
176270540
Date Filed
September 9, 2020
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Patent Citations
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US Patent 10374144 Dry plasma etch method to pattern MRAM stack
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US Patent 9406535 Ion injector and lens system for ion beam milling
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US Patent 9673071 Buffer station for thermal control of semiconductor substrates transferred therethrough and method of transferring semiconductor substrates
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US Patent 9806252 Dry plasma etch method to pattern MRAM stack
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US Patent 10256108 Atomic layer etching of AL
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US Patent 10672978 Method of manufacturing a variable resistance memory device
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Patent Primary Examiner
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Jiong-Ping Lu
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Patent abstract

A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.

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