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US Patent 12080562 Atomic layer etch and ion beam etch patterning

Patent 12080562 was granted and assigned to Lam Research on September, 2024 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

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Current Assignee

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Wenbing Yang1

Girish Dixit1

Samantha Siamhwa Tan1

Tamal Mukherjee1

Yang Pan1

Date of Patent

September 3, 2024

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Patent Application Number

176270541

Date Filed

September 9, 2020

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Patent Citations

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1

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1

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1

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1

Patent Primary Examiner

1

Patent abstract

A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.

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