US Patent 9978656 Mechanisms for forming fine-pitch copper bump structures

Patent 9978656 was granted and assigned to Taiwan Semiconductor Manufacturing Company on May, 2018 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

9978656

Date of Patent

May 22, 2018

Patent Application Number

13406270

Date Filed

February 27, 2012

Patent Citations Received

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US Patent 11942445 Semiconductor device with conductive pad

Patent Primary Examiner

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David Zarneke

Patent abstract

The mechanisms of forming a copper post structures described enable formation of copper post structures on a flat conductive surface. In addition, the copper post structures are supported by a molding layer with a Young's modulus (or a harder material) higher than polyimide. The copper post structures formed greatly reduce the risk of cracking of passivation layer and delamination of at the dielectric interface surrounding the copper post structures.