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US Patent 9831183 Contact structure and method of forming

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 4, 2014
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Date of Patent
November 28, 2017
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Patent Application Number
14532886
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Patent Citations Received
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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12131945 Semiconductor device and manufacturing method thereof
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US Patent 12131949 Bottom-up formation of contact plugs
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US Patent 12132000 Semiconductor device structure and methods of forming the same
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US Patent 12132041 Semiconductor device
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US Patent 12136570 Graphene layer for low resistance contacts and damascene interconnects
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US Patent 12136566 Semiconductor device and method of manufacture
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US Patent 11664272 Etch profile control of gate contact opening
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US Patent 11664279 Multiple threshold voltage implementation through lanthanum incorporation
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US Patent 11665890 One-time programmable memory device including anti-fuse element and manufacturing method thereof
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•••
Patent Inventor Names
Sheng-Hsuan Lin
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Yu-Hung Lin
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Mei-Hui Fu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9831183
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Patent Primary Examiner
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Latanya N Crawford Eason
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