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US Patent 9601342 FinFETs with strained well regions

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
September 4, 2015
Date of Patent
March 21, 2017
Patent Application Number
14846020
Patent Citations Received
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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12132050 Semiconductor structure cutting process and structures formed thereby
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US Patent 12132091 Work function layers for transistor gate electrodes
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US Patent 12132100 Profile control in forming epitaxy regions for transistors
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US Patent 11670586 Semiconductor device with source resistor and manufacturing method thereof
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US Patent 11670694 Dual metal capped via contact structures for semiconductor devices
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US Patent 11677013 Source/drain epitaxial layers for transistors
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US Patent 11685015 Method and system for performing chemical mechanical polishing
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US Patent 11688794 Method for epitaxial growth and device
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US Patent 11688625 Method for manufacturing semiconductor device
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9601342
Patent Primary Examiner
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Fei Fei Yeung Lopez

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