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US Patent 9520482 Method of cutting metal gate

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 13, 2015
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Date of Patent
December 13, 2016
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Patent Application Number
14940841
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Patent Citations Received
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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12132092 Backside vias in semiconductor device
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US Patent 12132112 Work function control in gate structures
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US Patent 12132050 Semiconductor structure cutting process and structures formed thereby
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US Patent 12132000 Semiconductor device structure and methods of forming the same
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US Patent 12132041 Semiconductor device
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US Patent 12132115 Semiconductor device structure with dielectric stressor
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US Patent 12132118 Semiconductor device having a multilayer source/drain region and methods of manufacture
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US Patent 12132091 Work function layers for transistor gate electrodes
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US Patent 12132100 Profile control in forming epitaxy regions for transistors
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•••
Patent Inventor Names
Chia-Wei Su
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Shih-Ting Hung
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Wei-Hao Wu
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Yi-Hsuan Hsiao
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Chih-Hao Wang
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Gloria Wu
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Inez Fu
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Kai-Chieh Yang
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Po-Chin Chang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9520482
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Patent Primary Examiner
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David S. Blum
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