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US Patent 8557712 PECVD flowable dielectric gap fill

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
December 15, 2008
Date of Patent
October 15, 2013
Patent Application Number
12334726
Patent Citations Received
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US Patent 12060639 Rapid flush purging during atomic layer deposition
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US Patent 11839090 Memory cells separated by a void-free dielectric structure
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US Patent 11881411 High pressure annealing process for metal containing materials
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US Patent 12063778 Microelectronic devices including stair step structures, and related electronic devices and methods
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US Patent 11694912 High pressure and high temperature anneal chamber
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US Patent 11705337 Tungsten defluorination by high pressure treatment
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US Patent 11746420 PECVD apparatus for in-situ deposition of film stacks
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US Patent 11749555 Semiconductor processing system
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US Patent 11756803 Gas delivery system for high pressure processing chamber
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8557712
Patent Primary Examiner
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Julio J Maldonado

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