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US Patent 11749555 Semiconductor processing system

Patent 11749555 was granted and assigned to Applied Materials on September, 2023 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Applied Materials
Applied Materials
Current Assignee
Applied Materials
Applied Materials
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11749555
Patent Inventor Names
Srinivas D. Nemani
Sultan Malik
Qiwei Liang
Adib M. Khan
Date of Patent
September 5, 2023
Patent Application Number
16706115
Date Filed
December 6, 2019
Patent Citations
‌
US Patent 7361231 System and method for mid-pressure dense phase gas and ultrasonic cleaning
‌
US Patent 7422636 Plasma enhanced atomic layer deposition system having reduced contamination
‌
US Patent 7429402 Ruthenium as an underlayer for tungsten film deposition
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US Patent 7432200 Filling narrow and high aspect ratio openings using electroless deposition
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US Patent 7460760 Optical waveguide master and method of manufacturing the same
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US Patent 7465650 Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry
‌
US Patent 7491658 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
‌
US Patent 7503334 Apparatus and methods for processing semiconductor substrates using supercritical fluids
...
Patent Primary Examiner
‌
Charlee J. C. Bennett
CPC Code
‌
H01L 21/67376
‌
H01L 21/67393
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H01L 21/68742

Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

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