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US Patent 8264065 ESD/antenna diodes for through-silicon vias

Patent 8264065 was granted and assigned to Synopsys on September, 2012 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Synopsys
Synopsys
Date Filed
October 23, 2009
Date of Patent
September 11, 2012
Patent Application Number
12605102
Patent Citations Received
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US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12068187 3D semiconductor device and structure with bonding and DRAM memory cells
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US Patent 12080743 Multilevel semiconductor device and structure with image sensors and wafer bonding
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US Patent 12094829 3D semiconductor device and structure
0
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US Patent 12094892 3D micro display device and structure
0
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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
0
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US Patent 11694922 Multilevel semiconductor device and structure with oxide bonding
0
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US Patent 11694944 3D semiconductor device and structure with metal layers and a connective path
0
•••
Patent Inventor Names
Jamil Kawa
0
Qing Su
0
Zongwu Tang
0
James D. Sproch
0
Min Ni
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8264065
Patent Primary Examiner
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Ida M. Soward

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