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US Patent 7767106 Method of dry etching oxide semiconductor film

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US Patent 12074210 Semiconductor device and method for manufacturing the same
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US Patent 12009434 Semiconductor device including transistors and method for manufacturing the same
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US Patent 11978742 Metal oxide film and method for forming metal oxide film
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US Patent 11894486 Method for manufacturing semiconductor device
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Patent abstract

Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

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US Patent 07767106 Method of dry etching oxide semiconductor film US Patent 7767106 Method of dry etching oxide semiconductor film

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Patent Number
0776710600
Patent Number
776710600
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=0776710600
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
077671060
Date of Patent
August 3, 2010
0
Patent Application Number
117755610
Date Filed
July 10, 2007
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=077671060
Patent Primary Examiner
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Binh X Tran
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
077671060
Date of Patent
August 3, 2010
0
Patent Application Number
117755610
Date Filed
July 10, 2007
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=077671060
Patent Primary Examiner
‌
Binh X Tran
0
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07767106
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 US Patent 07767106 Method of dry etching oxide semiconductor film

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07767106
Date of patent
August 3, 2010
Patent application number
11775561
Date Filed
July 10, 2007
Patent primary examiner
‌
Binh X Tran

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