Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 3, 2010
Patent Application Number
11775561
Date Filed
July 10, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
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