Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Raminda U. Madurawe0
Date of Patent
March 28, 2006
0Patent Application Number
107626270
Date Filed
January 23, 2004
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A new Insulated-Gate Field-Effect Thin Film Transistor (Gated-FET) is disclosed. A semiconductor Gated-FET device comprises a lightly doped resistive channel region formed on a first semiconductor thin film layer; and an insulator layer deposited on said channel surface with a gate region formed on a gate material deposited on said insulator layer; said gate region receiving a gate voltage having a first level modulating said channel resistance to a substantially non-conductive state and a second level modulating said channel resistance to a substantially conductive state.
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