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US Patent 12080329 Ferroelectric devices and ferroelectric memory cells

Patent 12080329 was granted and assigned to Micron Technology on September, 2024 by the United States Patent and Trademark Office.

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 US Patent 12080329 Ferroelectric devices and ferroelectric memory cells

Article

Patent abstract

A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Infobox
Is a
Patent
Patent
0
Patent Applicant
Micron Technology
Micron Technology
0
Current Assignee
Micron Technology
Micron Technology
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
120803290
Patent Inventor Names
Albert Liao0
Manzar Siddik0
Wayne I. Kinney0
Yi Fang Lee0
Date of Patent
September 3, 2024
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Patent Application Number
178121320
Date Filed
July 12, 2022
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Patent Citations
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US Patent 7098496 Ferroelectric transistor gate stack with resistance-modified conductive oxide
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US Patent 7387934 Nonvolatile semiconductor memory and manufacturing method for the same
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US Patent 7514272 Method of manufacturing ferroelectric memory device
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US Patent 7709359 Integrated circuit with dielectric layer
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US Patent 7754577 Method for fabricating capacitor
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US Patent 7781813 Ferroelectric memory device and method for manufacturing ferroelectric memory device
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US Patent 7927889 Method for manufacturing ferroelectric memory device and ferroelectric memory device
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US Patent 8000128 Structures for resistive random access memory cells
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US Patent 8106375 Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator
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US Patent 8198625 Transparent nonvolatile memory thin film transistor and method of manufacturing the same
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US Patent 8304823 Integrated circuit including a ferroelectric memory cell and method of manufacturing the same
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US Patent 11211384 Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
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US Patent 9053802 Ferroelectric memory cell for an integrated circuit
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US Patent 9142639 Graphene electronic devices and methods of manufacturing the same
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US Patent 9147689 Methods of forming ferroelectric capacitors
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US Patent 9169557 Process for producing oxide films
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US Patent 9269899 Electronic device, memory cell, and method of flowing electric current
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US Patent 9337421 Multi-layered phase-change memory device
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US Patent 10038092 Three-level ferroelectric memory cell using band alignment engineering
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US Patent 10211223 Vertical ferroelectric memory device and a method for manufacturing thereof
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US Patent 10242989 Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
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US Patent 10319426 Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
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US Patent 10355002 Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
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US Patent 10580978 Current compliance layers and memory arrays comprising thereof
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US Patent 10650978 Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
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US Patent 10672881 Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor
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US Patent 10726899 Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
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US Patent 10748914 Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material
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US Patent 11017830 Ferroelectric memories
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US Patent 11398263 Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
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US Patent 11552086 Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material
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US Patent 6858883 Partially processed tunnel junction control element
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US Patent 7005303 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
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Patent Primary Examiner
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Leon Viet Q Nguyen
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CPC Code
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H01L 28/40
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H01L 28/55
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G11C 11/2297
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G11C 11/2275
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G11C 11/2273
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G11C 11/221
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