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Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 27, 2015
0Patent Application Number
127770220
Date Filed
May 10, 2010
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
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