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US Patent 11955583 Flip chip micro light emitting diodes

Patent 11955583 was granted and assigned to Lumileds on April, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Lumileds
Lumileds
0
Current Assignee
Lumileds
Lumileds
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119555830
Patent Inventor Names
Yeow Meng Teo0
Wee-Hong Ng0
Geok Joo Soh0
Chee Chung James Wong0
Pei-Chee Mah0
Date of Patent
April 9, 2024
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Patent Application Number
172133880
Date Filed
March 26, 2021
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Patent Citations
‌
US Patent 8487340 Optoelectronic device based on nanowires and corresponding processes
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US Patent 8638032 Organic optoelectronic device coated with a multilayer encapsulation structure and a method for encapsulating said device
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US Patent 8647957 Method for making semi-conductor nanocrystals
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US Patent 8697548 Method for making semi-conductor nanocrystals oriented along a predefined direction
0
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US Patent 8698396 Organic optoelectronic device and method for encapsulating same
0
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US Patent 7213942 Light emitting diodes for high AC voltage operation and general lighting
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US Patent 7943406 LED fabrication via ion implant isolation
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US Patent 8080828 Low profile side emitting LED with window layer and phosphor layer
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...
Patent Primary Examiner
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Su C Kim
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CPC Code
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H01L 33/0093
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H01L 33/44
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H01L 2933/0016
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H01L 33/32
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H01L 25/0753
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H01L 33/385
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H01L 33/20
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H01L 33/62
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Patent abstract

A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

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