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US Patent 8647957 Method for making semi-conductor nanocrystals

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Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8647957
Patent Inventor Names
Jean-Charles Barbe0
Pierre Muller0
Fabien Cheynis0
Frederic Leroy0
Lukasz Borowik0
Denis Mariolle0
Ezra Bussmann0
Date of Patent
February 11, 2014
Patent Application Number
13464363
Date Filed
May 4, 2012
Patent Citations Received
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US Patent 11923402 Light emitting diode device
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US Patent 11935987 Light emitting diode arrays with a light-emitting pixel area
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US Patent 11942507 Light emitting diode devices
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...
Patent Primary Examiner
‌
Charles Garber
Patent abstract

A method for making semi-conductor nanocrystals, including at least the steps of:forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals;annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.

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