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US Patent 8698396 Organic optoelectronic device and method for encapsulating same

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
86983961
Patent Inventor Names
Bernard Aventurier1
Julia De Girolamo1
Tony Maindron1
Date of Patent
April 15, 2014
1
Patent Application Number
136408411
Date Filed
April 1, 2011
1
Patent Citations Received
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US Patent 11961875 Monolithic segmented LED array architecture with islanded epitaxial growth
2
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US Patent 11777061 Light emitting diode device with tunable emission
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US Patent 11784286 Light emitting diode devices with defined hard mask opening
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US Patent 11923402 Light emitting diode device
3
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US Patent 11935987 Light emitting diode arrays with a light-emitting pixel area
4
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US Patent 11942507 Light emitting diode devices
5
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US Patent 11955583 Flip chip micro light emitting diodes
6
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US Patent 11705534 Methods of making flip chip micro light emitting diodes
7
Patent Primary Examiner
‌
Mary Ellen Bowman
1
Patent abstract

The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area (5) covered with a multi-layer encapsulation structure (201) and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n≧1) comprising an inorganic film F1, . . . , Fn and a photosensitive layer C1, . . . , Cn, including an internal stack F1/C1 in which F1 covers the active area and C1, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C1, Cn is etched and covers the film F1, . . . , Fn by extending around a peripheral edge (5a) of the active area in at least one structured surrounding portion (210, 211, 212) ending beyond the adjacent connection area, and if n>2, the or each layer C2, . . . , Cn surrounds the layer C1, . . . , Cn−1 of the immediately underlying stack, such that the layer or each layer C1, . . . , Cn passivates the film F1, Fn and laterally protects the underlying active area from the developing solutions and solvents used for etching said layer C1, . . . , Cn.

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