Patent attributes
A method forms heterogeneous complementary FETs and a related semiconductor structure. The method comprises forming a layered nanosheet stack comprising two layers of a first channel material alternating with two layers of a second channel material, depositing a dielectric layer on a top layer of the nanosheet stack, and forming a checkered mask material with at least a first and a second row above the dielectric material. The first and the second row are distanced from each other. The method removes the first channel material and the second channel material outside an area of the checkered mask material, resulting in the at least a first row of pillars and a second row of pillars of layered nanosheet stacks. The method selectively removes in each of the pillars of the first stripe the second channel material.
