‌

US Patent 11569444 Three-dimensional confined memory cell with decoupled read-write

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Date Filed
March 30, 2021
Date of Patent
January 31, 2023
Patent Application Number
17217788
Patent Citations
‌
US Patent 10186657 Three-terminal metastable symmetric zero-volt battery memristive device
‌
US Patent 10366323 Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes
‌
US Patent 10429343 Tunable ionic electronic transistor
‌
US Patent 10497866 Ionic floating-gate memory device
‌
US Patent 10748059 Architecture for an electrochemical artificial neural network
‌
US Patent 10586591 High speed thin film two terminal resistive memory
‌
US Patent 10810506 Qubit biasing scheme using non-volatile devices
‌
US Patent 10079341 Three-terminal non-volatile multi-state memory for cognitive computing applications
‌
US Patent 10090461 Oxide-based three-terminal resistive switching logic devices
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11569444
Patent Primary Examiner
‌
Michael T. Tran
CPC Code
‌
G11C 13/0011
‌
G11C 13/004
‌
G11C 13/0069
‌
G11C 2013/005
‌
G11C 2013/0071
‌
H01L 45/085
‌
H01L 45/146
‌
G11C 11/5614

Find more entities like US Patent 11569444 Three-dimensional confined memory cell with decoupled read-write

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo
By using this site, you agree to our Terms of Service.