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US Patent 10586591 High speed thin film two terminal resistive memory

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Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10586591
Date of Patent
March 10, 2020
Patent Application Number
15864179
Date Filed
January 8, 2018
Patent Citations Received
‌
US Patent 11569444 Three-dimensional confined memory cell with decoupled read-write
‌
US Patent 11568927 Two-terminal non-volatile memory cell for decoupled read and write operations
Patent Primary Examiner
‌
Mohammed A Bashar
Patent abstract

A high speed thin film two terminal resistive memory article of manufacture comprises a chargeable and dischargeable variable resistance thin film battery having a plurality of layers operatively associated with one another, the plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising the cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, the barrier layer comprised of a material that substantially prevents the cations from combining with the anode layer.

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