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US Patent 11489078 Lightly-doped channel extensions

Patent 11489078 was granted and assigned to Taiwan Semiconductor Manufacturing Company on November, 2022 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Date Filed
October 27, 2020
Date of Patent
November 1, 2022
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Patent Application Number
17081399
Patent Citations
‌
US Patent 10032627 Method for forming stacked nanowire transistors
‌
US Patent 10157799 Multi-gate device and method of fabrication thereof
‌
US Patent 10475902 Spacers for nanowire-based integrated circuit device and method of fabricating same
‌
US Patent 10199502 Structure of S/D contact and method of making same
‌
US Patent 10290546 Threshold voltage adjustment for a gate-all-around semiconductor structure
Patent Citations Received
‌
US Patent 12015090 Lightly-doped channel extensions
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11489078
Patent Primary Examiner
‌
Tong-Ho Kim
CPC Code
‌
H01L 29/66545
‌
H01L 29/66553
‌
H01L 29/66742
‌
H01L 29/66787
‌
H01L 29/7848
‌
H01L 29/0653
‌
H01L 29/0847
‌
H01L 29/165
‌
H01L 29/78684
‌
H01L 29/78696
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