Patent attributes
A method includes forming a first semiconductor stack using an epitaxial growth process, the first semiconductor stack comprising a first plurality of semiconductor layers alternating with a second plurality of semiconductor layers, the first plurality of semiconductor layers comprising a first semiconductor material and the second plurality of semiconductor layers comprising a second semiconductor material that is different than the first semiconductor material. The method further includes patterning the first semiconductor stack to form a set of semiconductor stack features, forming isolation features between the semiconductor stack features, removing at least one of the semiconductor stack features, thereby forming at least one trench, and forming, within the trench, a second semiconductor stack using an epitaxial growth process, the second semiconductor stack having different characteristics than the first semiconductor stack.
