US Patent 11387319 Nanosheet transistor device with bottom isolation

Patent

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US Patent 10840329 Nanosheet transistor having improved bottom isolation

US Patent 11069819 Field-effect transistors with channel regions that include a two-dimensional material on a mandrel

US Patent 10332803 Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming

US Patent 10032867 Forming bottom isolation layer for nanosheet technology

US Patent 10134901 Methods of forming a bulk field effect transistor (FET) with sub-source/drain isolation layers and the resulting structures

US Patent 10141403 Integrating thin and thick gate dielectric nanosheet transistors on same chip

United States Patent and Trademark Office

Mary A Wilczweski

H01L 29/78696

H01L 27/0924

H01L 29/775

H01L 29/1079

H01L 29/78687

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H01L 21/84

H01L 27/1203

H01L 29/7827

H01L 29/66666