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US Patent 10998187 Selective deposition with atomic layer etch reset

Patent 10998187 was granted and assigned to Lam Research on May, 2021 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Lam Research
Lam Research
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Date Filed
December 13, 2019
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Date of Patent
May 4, 2021
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Patent Applicant
Lam Research
Lam Research
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Patent Application Number
16713557
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Patent Citations
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US Patent 10374144 Dry plasma etch method to pattern MRAM stack
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US Patent 10460930 Selective growth of SiO2 on dielectric surfaces in the presence of copper
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US Patent 10490413 Selective growth of silicon nitride
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US Patent 10494715 Atomic layer clean for removal of photoresist patterning scum
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US Patent 10515816 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
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US Patent 10559461 Selective deposition with atomic layer etch reset
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US Patent 10629429 Selective deposition of silicon oxide
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US Patent 10727073 Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
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US Patent 10749103 Dry plasma etch method to pattern MRAM stack
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US Patent 10784086 Cobalt etch back
•••
Patent Citations Received
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US Patent 11404275 Selective deposition using hydrolysis
Patent Inventor Names
Meliha Gozde Rainville
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Nagraj Shankar
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David Charles Smith
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David W. Porter
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Dennis M. Hausmann
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Kapu Sirish Reddy
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Karthik Sivaramakrishnan
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10998187
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Patent Primary Examiner
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Mohammad M Choudhry
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